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首頁 > 英聯(lián)產(chǎn)品 > 分立器件 > 小信號和功率MOSFET
UM8120DA
20V N溝道功率MOSFET,采用DFN3 1.0×0.6封裝
Key Specifications
Part Number Description Status Channel VDS(V) VGS(V) RDS(ON)@4.5V(?) Qg@4.5V(nC) ID Max.(A) PD Max.(W) VGS(th) Min.(V) Pin/Package EV Kit Available?
UM8120DA 20V N溝道功率MOSFET,采用DFN3 1.0×0.6封裝 ACTIVE N 20 8 0.16 0 0.6 0.23 0.5 3/DFN 1.0×0.6
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Product Description
 
The UM8120DA is a low threshold N-channel MOSFET with extremely low on-resistance. This benefit provides the designer with an excellent efficient device for use in battery and load management applications. The device is available in a space-saving, small-outline DFN3 1.0×0.6 package.
 
Features
 
- Drain-Source Voltage (Max): 20V
- Low On-Resistance:
  160mΩ@VGS=4.5V, ID=0.6A
  210mΩ@VGS=2.5V, ID=0.3A
  270mΩ@VGS=1.8V, ID=0.2A
- Continuous Drain Current (Max):
 
Applications
 
-Load Switch
-Battery Packs
-Battery-Powered Portable Equipments
-Cellular and Cordless Telephones

Pin Configurations  

                         (Top View)

                 
  
Ordering Information

Part Number
Packaging Type
Marking Code
Shipping Qty
UM8120DA
DFN3 1.0×0.6
E8
10000pcs/7Inch
Tape & Reel
@2014 Union Semiconductor Limited. All rights Reserved.
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